Title: THE EFFECT OF OXYGEN ON THE STRUCTURE OF ANNEALED W/C MULTILAYER THIN-FILMS
Author(s): CHAO SS, PAWLIK DA, GONZALEZ-HERNANDEZ J, WANG Q, ALLRED DD
Source: SOLID STATE COMMUNICATIONS 79 (3): 205-207 JUL 1991
Document Type: Article
Language: English
Cited References: 11 Times Cited: 3 Find Related Records Information
Abstract: W/C multilayers were prepared on unheated Si substrates by RF sputtering method. Raman scattering, x-ray diffraction and Auger depth profile were used to characterize the structure of the as-prepared and annealed multilayers in the range of 300 to 800 C. The results were compared in samples subjected to three different annealing conditions: 1) in air, 2) in high purity Ar atmosphere and 3) in evacuated and sealed (approximately 10(-4) torr) ampules. The result of Auger profiles indicates that the penetration depth of oxygen in the films depends on the annealing conditions, annealing temperature and layering structure. It also shows the loss of compositional modulation and the oxidation of W in the region reached by the oxygen. Raman scattering from the oxidized top layer(s) displays a spectrum with lines associated with crystalline tungsten oxide and segregated microcrystalline graphite particles
KeyWords Plus: RAMAN-SCATTERING; CARBON
Addresses: CHAO SS (reprint author), ENERGY CONVERS DEVICES INC, TROY, MI 48084 USA
NATL POLYTECH INST, CTR INVEST ESTUD, DEPT FIS, MEXICO CITY, DF 14 MEXICO
BRIGHAM YOUNG UNIV, DEPT PHYS, PROVO, UT 84602 USA
Publisher: PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD, ENGLAND OX5 1GB

ISSN: 0038-1098