| Abstract: |
The goal of this project is to enable fabrication of a transistor device using silicon nanowires (SiNW) as semiconductors. In order to be able to establish electrical contact with the nanowires the SiNW growth is conned to certain areas that can be contacted using electron-beam lithography (EBL). This is done by controlling the deposition of SiNW catalyst through angle-evaporation onto pillars on the device. The nanowires then grow from the sidewalls of the pillars and can be contacted using EBL. |